DocumentCode :
3483119
Title :
Effects of mixing low-Z gases on a 2.45-GHz multiply charged ion source
Author :
Kato, Yushi ; Saitoh, Mitsuru ; Kubo, Yoshiyuki ; Ishii, Shigeyuki
Author_Institution :
Dept. of Electron. & Inf., Toyama Univ., Japan
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
418
Lastpage :
421
Abstract :
Fundamental phenomena in mixing low-Z gases into the operating gas have been experimentally studied in an electron cyclotron resonance (ECR) multicharged ion source (2.45 GHz). The ECR plasma is confined in the mirror held superimposed by the octupole magnetic field. An ECR zone is formed near the bottom of the mirror trap. The main operating gas is argon. Hydrogen, helium, nitrogen, and oxygen gases are chosen as admixtures. The multicharged ions pass through the extractor at the mirror end, and the charge state distributions are investigated at various pressures and mixing ratios. The gas-mixing effect enhances production efficiency of high-charge state ions (Ar6+-9+); in particular their currents substantially increase in the case of oxygen mixing. There exists an optimum mixing ratio and total pressure for each admixture. The electron temperature and density are measured by a Langmuir probe. The cause of enhanced production by admixing low-Z gases is discussed by taking account of plasma parameters including plasma potentials and ion temperatures estimated from elaborate measurement of the ion beam
Keywords :
gas mixtures; ion sources; magnetic mirrors; plasma devices; 2.45 GHz; Ar; ECR plasma; H2; He; Langmuir probe; N2; O2; charge state distribution; electron density; electron temperature; ion beam measurement; ion temperature; low-Z gas mixing; mirror trap; multiply charged ion source; octupole magnetic field; plasma potential; production efficiency; Argon; Cyclotrons; Electrons; Gases; Mirrors; Plasma confinement; Plasma density; Plasma measurements; Plasma temperature; Production;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586382
Filename :
586382
Link To Document :
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