Title :
Spectroscopy and 1.54 /spl mu/m light emitting device based on erbium-doped gallium nitride
Author :
Seo, J.T. ; Hommerich, U. ; Thaik, M. ; MacKenzie, J.D. ; Abernathy, C.R. ; Zavada, J.M.
Author_Institution :
Dept. of Phys., Hampton Univ., VA, USA
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
GaN:Er prepared by metalorganic molecular beam epitaxy shows intense 1.54 /spl mu/m photoluminescence (PL) at room temperature. Efficient below-gap absorption bands have been identified using photoluminescence excitation spectroscopy. An infrared hybrid InGaN-GaN:Er LED operating at 1.54 /spl mu/m has been demonstrated. Even though the resulting emission at 1.54 /spl mu/m was weak, it shows that the electroluminescence from InGaN can be used to excited Er ions in GaN.
Keywords :
chemical beam epitaxial growth; electroluminescence; erbium; gallium compounds; impurity absorption spectra; infrared sources; infrared spectra; light emitting diodes; photoluminescence; 1.54 /spl mu/m light emitting device; 1.54 mum; GaN:Er; InGaN-GaN:Er; efficient below-gap absorption bands; electroluminescence; erbium-doped gallium nitride; infrared hybrid InGaN-GaN:Er LED; metalorganic molecular beam epitaxy; photoluminescence; photoluminescence excitation spectroscopy; room temperature; Absorption; Carbon dioxide; Erbium; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Optical films; Photoluminescence; Photonic band gap; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.811415
