Title :
Properties of InGaN-GaN multi-quantum well laser diode grown by low pressure metalorganic chemical vapor deposition
Author_Institution :
Mater. & Device Centre, Samsung Adv. Inst. of Technol., Suwon, South Korea
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
The laser diode (LD) structure was grown on a c-plane sapphire substrate using MOCVD. In order to form stripe LDs the structure was etched using chemically assisted ion beam etching (CAIBE) until the n-type GaN layer was exposed. Laser facets were formed by CAIBE.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; optical fabrication; quantum well lasers; sputter etching; CAIB; GaN; InGaN-GaN; InGaN-GaN multi-quantum well laser diode; MOCVD; c-plane sapphire substrate; chemically assisted ion beam etching; etched; laser diode structure; laser facets; low pressure metalorganic chemical vapor deposition; n-type GaN layer; stripe LD; Diode lasers; Electrons; Gallium nitride; Light emitting diodes; Organic chemicals; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.811417
