Title :
Comparison of spontaneous and stimulated emission from UV-blue photonic materials
Author :
Little, B.D. ; Yong-Hoon Cho ; Schmidt, T.J. ; Gainer, G.H. ; Lam, J.B. ; Song, J.J. ; Yang, W. ; Keller, S. ; Mishra, U.K. ; DenBaars, S.P. ; Jhe, W.
Author_Institution :
Center for Laser & Photonics Res., Oklahoma State Univ., Stillwater, OK, USA
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
We have systematically studied both the spontaneous and stimulated emission (SE) behavior in GaN, InGaN, and AlGaN thin films by means of photoluminescence (PL), PL excitation, time-resolved PL, and optical pumping. All the epilayers were grown by metalorganic chemical vapor deposition (MOCVD). Recombination in the GaN thin films was found to be affected by non-radiative processes in the temperature range of 10 - 300 K.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; optical films; photoluminescence; semiconductor thin films; spontaneous emission; stimulated emission; time resolved spectra; 10 to 300 K; AlGaN; AlGaN thin films; GaN; InGaN; MOCVD; PL excitation; UV-blue photonic materials; metalorganic chemical vapor deposition; non-radiative processes; optical pumping; photoluminescence; spontaneous emission; stimulated emission; time-resolved PL; Aluminum gallium nitride; Chemical vapor deposition; Gallium nitride; MOCVD; Optical films; Optical pumping; Photoluminescence; Stimulated emission; Temperature distribution; Transistors;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.811418
