Comparison of spontaneous and stimulated emission from UV-blue photonic materials

Author

Little, B.D. ; Yong-Hoon Cho ; Schmidt, T.J. ; Gainer, G.H. ; Lam, J.B. ; Song, J.J. ; Yang, W. ; Keller, S. ; Mishra, U.K. ; DenBaars, S.P. ; Jhe, W.

Author_Institution

Center for Laser & Photonics Res., Oklahoma State Univ., Stillwater, OK, USA

Volume

2

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

290

Abstract

We have systematically studied both the spontaneous and stimulated emission (SE) behavior in GaN, InGaN, and AlGaN thin films by means of photoluminescence (PL), PL excitation, time-resolved PL, and optical pumping. All the epilayers were grown by metalorganic chemical vapor deposition (MOCVD). Recombination in the GaN thin films was found to be affected by non-radiative processes in the temperature range of 10 - 300 K.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; optical films; photoluminescence; semiconductor thin films; spontaneous emission; stimulated emission; time resolved spectra; 10 to 300 K; AlGaN; AlGaN thin films; GaN; InGaN; MOCVD; PL excitation; UV-blue photonic materials; metalorganic chemical vapor deposition; non-radiative processes; optical pumping; photoluminescence; spontaneous emission; stimulated emission; time-resolved PL; Aluminum gallium nitride; Chemical vapor deposition; Gallium nitride; MOCVD; Optical films; Optical pumping; Photoluminescence; Stimulated emission; Temperature distribution; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.811418

Filename

811418