DocumentCode
3483257
Title
Plasma flood system-physics of low energy electron generation, plasma coupling, electron transport and surface charge neutralization on wafer
Author
Ito, Hiroyuki ; Current, Michael I.
Author_Institution
Implant Div., Appl. Mater., Horsham, UK
fYear
1996
fDate
16-21 Jun 1996
Firstpage
432
Lastpage
435
Abstract
Plasma Flood System (PFS) was developed for the Precision Implant 9500 to achieve the most advanced charging control on wafer surface for high throughput implant processes over a wide range of beam current. A novel configuration of plasma discharge chamber made it possible to generate primary electrons at between 0 eV and 5 eV while maintaining a high emission current of over 100 mA. Space charge limit in generating low energy electrons was overcome by combining the arc discharge chamber at the anode potential with a negatively biased confinement tube via a potential shielding. Magnetic field from the plasma source coupled with a filament induced field plays an important role in transporting low energy electrons out of the chamber. The system also has a feature to increase the emission by one order of magnitude by offsetting a reference potential of the plasma source. This paper discusses the physics of the PFS describing how the electrons are generated at below 5 eV and transported at a high flux into the guide tube held typically at -10 V
Keywords
VLSI; arcs (electric); ion implantation; surface charging; -10 V; 0 to 5 eV; 100 mA; Precision Implant 9500; beam current; charging control; electron transport; emission current; filament induced field; high throughput implant processes; low energy electron generation; negatively biased confinement tube; plasma coupling; plasma discharge chamber; plasma flood system; potential shielding; space charge limit; surface charge neutralization; wafer surface; Control systems; Electron emission; Electron tubes; Floods; Implants; Particle beams; Plasma sources; Surface charging; Surface discharges; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586388
Filename
586388
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