• DocumentCode
    3483257
  • Title

    Plasma flood system-physics of low energy electron generation, plasma coupling, electron transport and surface charge neutralization on wafer

  • Author

    Ito, Hiroyuki ; Current, Michael I.

  • Author_Institution
    Implant Div., Appl. Mater., Horsham, UK
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    432
  • Lastpage
    435
  • Abstract
    Plasma Flood System (PFS) was developed for the Precision Implant 9500 to achieve the most advanced charging control on wafer surface for high throughput implant processes over a wide range of beam current. A novel configuration of plasma discharge chamber made it possible to generate primary electrons at between 0 eV and 5 eV while maintaining a high emission current of over 100 mA. Space charge limit in generating low energy electrons was overcome by combining the arc discharge chamber at the anode potential with a negatively biased confinement tube via a potential shielding. Magnetic field from the plasma source coupled with a filament induced field plays an important role in transporting low energy electrons out of the chamber. The system also has a feature to increase the emission by one order of magnitude by offsetting a reference potential of the plasma source. This paper discusses the physics of the PFS describing how the electrons are generated at below 5 eV and transported at a high flux into the guide tube held typically at -10 V
  • Keywords
    VLSI; arcs (electric); ion implantation; surface charging; -10 V; 0 to 5 eV; 100 mA; Precision Implant 9500; beam current; charging control; electron transport; emission current; filament induced field; high throughput implant processes; low energy electron generation; negatively biased confinement tube; plasma coupling; plasma discharge chamber; plasma flood system; potential shielding; space charge limit; surface charge neutralization; wafer surface; Control systems; Electron emission; Electron tubes; Floods; Implants; Particle beams; Plasma sources; Surface charging; Surface discharges; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586388
  • Filename
    586388