Title :
Device characteristics of index-guided In/sub x/Ga/sub 1-x/N/In/sub y/Ga/sub 1-y/N MQW laser diodes grown by low-pressure metal organic chemical vapor deposition
Author :
Chinkyo Kim ; Min Yang ; Jaehyung Yi ; Sungwoo Kim ; Yoonho Choi ; Tae-Kyung Yoo
Author_Institution :
OE Gr., LG Corp. Inst. of Technol., Seoul, South Korea
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
Device characteristics of index-guided In/sub x/Ga/sub 1-x/N/In/sub y/Ga/sub 1-y/N MQW laser diodes were investigated in terms of ridge depth and etching conditions. We report room temperature pulsed operation of In/sub x/Ga/sub 1-x/N/In/sub y/Ga/sub 1-y/N multiple quantum well (MQW) laser diodes with optimized ridge depth.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; laser modes; optimisation; quantum well lasers; waveguide lasers; In/sub x/Ga/sub 1-x/N/In/sub y/Ga/sub 1-y/N MQW laser diodes; InGaN-InGaN; etching conditions; index-guided; low-pressure metal organic chemical vapor deposition; optimized ridge depth; ridge depth; room temperature pulsed operation; Diode lasers; Dry etching; Gallium nitride; Material storage; Optical devices; Optical pulses; Power generation; Quantum well devices; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.811419
