Title :
Interminiband transition in AlGaN/GaN superlattice for 1.55-/spl mu/m ultrafast optical switches
Author :
Suzuki, N. ; Iizuka, N.
Author_Institution :
Adv. Semicond. Devices Res. Lab., Toshiba Corp., Kawasaki, Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
We describe a new design to achieve the 1.55-/spl mu/m intersubband transition (ISBT) in Al/sub x/Ga/sub 1-x/N/GaN materials under the existence of a built-in field. We also show that this new design is effective to process ultrashort optical pulses in a waveguide configuration.
Keywords :
III-V semiconductors; conduction bands; electro-optical switches; gallium compounds; high-speed optical techniques; indium compounds; optical waveguides; semiconductor superlattices; wide band gap semiconductors; 1.55 mum; 1.55-/spl mu/m ultrafast optical switches; AlGaN-GaN; AlGaN/GaN superlattice; built-in field; design; interminiband transition; intersubband transition; ultrashort optical pulses; waveguide configuration; Absorption; Aluminum gallium nitride; Electrons; Gallium nitride; Optical switches; Optical waveguides; Proposals; Quantum well devices; Superlattices; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.811428
