• DocumentCode
    3483354
  • Title

    Implant 9500xR: a high productivity implantation system for 5E10-1E16 ion.cm-2 dose and 5 keV-750 keV energy applications

  • Author

    Adibi, Babak ; Edwards, Peter

  • Author_Institution
    Implant Div., Appl. Mater. Inc., Santa Clara, CA, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    440
  • Lastpage
    442
  • Abstract
    The capability of the Implant 9500xR ion implanter has been extended to become an all purpose implanter. The Implant 9500xR not only has all capability of a high current implanter, but it can also achieve very stable beam currents well below 1 mA (c.f. medium current implanters) for low dose applications. The ion energy range has also been extended to 750 keV for high energy applications and low energy of 5 keV. The throughput of the Implant 9500xR has been optimised to 220 wph, as a mechanical limit for 200 mm wafers, with substantially faster pumping of the wafer loader, a more effective transfer mechanism and significant enhancements to the system automation. Contamination has been minimised by optimising mechanical design of the beamline and processor. These enhancements has rendered Implant 9500xR as a cost effective implanter for the present and future technologies
  • Keywords
    ion implantation; 200 mm; 5 to 750 keV; Implant 9500xR; beam current; contamination; ion implanter; productivity; wafer throughput; Automation; Contamination; Costs; Implants; Manufacturing; Optical beams; Particle beam optics; Production; Productivity; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586392
  • Filename
    586392