DocumentCode :
3483411
Title :
The VIISion 80 and VIISion 200 ion implanter beam lines
Author :
Renau, A. ; Smatlak, D. ; Angel, G.C. ; Mack, M.E. ; Evans, E.
Author_Institution :
Varian Ion Implant Syst., Gloucester, MA, USA
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
450
Lastpage :
453
Abstract :
The beam line design for Varian´s VIISion high current ion implanters incorporates a number of significant features to enhance the generation and transport of ion beams with high efficiencies and minimal heavy metals and particle production. These include a dual filament ion source, a constant current extraction system with variable z axis and suppression voltage, a very high resolving power high acceptance mass analysis system, a rotating mass defining slit, a variable gap acceleration system and a full faraday in front of the wafer. This paper describes the architecture of both the 80 keV and 200 keV beam lines. Some of the novel beam line modules are discussed along with the performance of these systems
Keywords :
beam handling equipment; ion implantation; 200 keV; 80 keV; VIISion 200; VIISion 80; Varian; beam line design; constant current extraction system; dual filament ion source; faraday; high current ion implanter; ion beam generation; ion beam transport; mass analysis system; rotating mass defining slit; variable gap acceleration system; Apertures; Electrodes; Geometry; Implants; Ion beams; Ion sources; Magnetic analysis; Magnetic fields; Particle beams; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586395
Filename :
586395
Link To Document :
بازگشت