DocumentCode :
3483435
Title :
Performance characteristics of the Genus Inc. TandetronTM 1520 MeV ion implantation system
Author :
O´Connor, J.P. ; Chase, Michael S. ; Richards, Steven L F ; Tokoro, Nobuhiro
Author_Institution :
Ion Technol. Div., Genus Inc., Newburyport, MA, USA
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
454
Lastpage :
457
Abstract :
As the MeV ion implantation market expands and matures, the tools used for the high energy processes must meet stringent customer requirements. In order to meet the needs of production users, Genus Inc. has developed the TandetronTM 1520 MeV ion implantation system. The TandetronTM 1520 is a third-generation high energy ion implanter which evolved from the successful Genus 1510 system. In this work, a review of the key performance characteristics of the system are presented. Included are parameters such as beam generation, implant profiles, wafer throughputs, particle performance, automation capabilities, and maintainability. In particular, the following features are highlighted: (1) energy range expansion, (2) footprint reduction, (3) ion source innovations, (4) control system and user interface enhancements, and, (5) maintenance simplification
Keywords :
ion implantation; 1520 MeV; Genus Tandetron 1520; automation; beam generation; control system; energy range; high energy ion implanter; implant profile; ion source; maintainability; particle contamination; system footprint; user interface; wafer throughput; Automatic control; Automation; Control systems; Implants; Ion implantation; Ion sources; Particle beams; Production systems; Technological innovation; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586397
Filename :
586397
Link To Document :
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