Productivity brush-up of the Nissin EXCEED2000 medium current implanter

Author

Nagai, N. ; Naito, M. ; Matsumoto, T. ; Nishikawa, K. ; Iwasawa, K. ; Nishigami, Y. ; Senoh, K. ; Nakaya, M. ; Saitoh, Y. ; Hosono, M. ; Tanaka, Y. ; Satoh, S. ; Nakamura, M. ; Kawai, T.

Author_Institution

Ion Equipment Div., Nissin Electr. Co. Ltd., Kyoto, Japan

fYear

1996

fDate

16-21 Jun 1996

Firstpage

462

Lastpage

465

Abstract

EXCEED200O´s versatile performance resulted from its exceptional beam current, its energy contamination-free configuration as well as the reliable fully automated operation ensures outstanding productivity. Dose uniformity is guaranteed as better than 0.5% for all the operation condition of the mass-energy-beam current specification. Not a trace of energy-contaminants are detected in the SIMS depth profile for doubly and triply charged ion implantation. The quick and reproducible automatic beam setup at various recipe changes including the self-check of dose uniformity and beam parallelism, realizes excellent coordination with the latest factory automation. The electrostatic wafer chuck mounted in platen has been proved to keep the guaranteed throughput of 200 wafers/hour

Keywords

ion implantation; Nissin EXCEED2000; SIMS depth profile; automation; beam current; beam parallelism; dose uniformity; electrostatic wafer chuck; energy contamination; medium current ion implanter; multiply charged ions; productivity; self-checking; throughput; Electrostatics; Elementary particle vacuum; Implants; Ion implantation; Ion sources; Magnetic separation; Manufacturing automation; Productivity; Statistics; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586400

Filename

586400