DocumentCode
3483500
Title
The VIISion 80 and VIISion 200: high current ion implantation systems for greater throughput with excellent performance at low to high doses
Author
Lundquist, Paul ; Pedersen, Bjorn ; Ackerman, David ; Brown, Douglas
Author_Institution
Varian Ion Implant Syst., Gloucester, MA, USA
fYear
1996
fDate
16-21 Jun 1996
Firstpage
466
Lastpage
469
Abstract
The 80 keV and 200 keV VIISion ion implantation systems autotune and implant high doses with high beam currents for improved throughput. The design of the ion optics allows low energy implants in drift mode. When implanting with high currents, a plasma flood gun system is used to prevent wafer charging problems. These implanters deliver a repeatable uniformly implanted dose, with low particle counts, over a range from low to high doses
Keywords
ion implantation; 200 keV; 80 keV; VIISion 200; VIISion 80; autotuning; dose uniformity; drift mode; high current ion implantation; ion optics; particle count; plasma flood gun; throughput; wafer charging; Acceleration; Contamination; Floods; Implants; Ion implantation; Ion sources; Plasma immersion ion implantation; Semiconductor device modeling; Throughput; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586401
Filename
586401
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