Low dose performance of a high current ion implanter in production

Author

Angelo, David A St ; Rendon, Michael J. ; Dyer, David E. ; Breeden, Terry A.

Author_Institution

Semicond. Equipment Oper., Eaton Corp., Austin, TX, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

490

Lastpage

493

Abstract

The ion implant dose requirements of a modern semiconductor manufacturing product flow span a range of approximately 1E11 cm^-2 to 1E16 cm^-2. High current implanters are typically operated in applications that require doses greater than 1E14 cm^-2. The low dose capability of a high current ion implanter is demonstrated for doses less than 5e12 cm^-2 and beam currents less than 25 uA. The performance is studied using various metrology tools and verified using device data from a CMOS integrated circuit manufacturing process. Thermal wave and optical densitometry sensitivity and repeatability is determined over various time intervals. Adjusting threshold voltage with ion implantation is discussed

Keywords

CMOS integrated circuits; integrated circuit measurement; integrated circuit technology; ion implantation; 25 muA; CMOS integrated circuit manufacturing; high current ion implanter; low dose performance; metrology; optical densitometry; thermal wave measurement; threshold voltage; CMOS integrated circuits; Implants; Ion implantation; Manufacturing processes; Metrology; Optical sensors; Particle beam optics; Production; Semiconductor device manufacture; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586407

Filename

586407