Title :
Low dose performance of a high current ion implanter in production
Author :
Angelo, David A St ; Rendon, Michael J. ; Dyer, David E. ; Breeden, Terry A.
Author_Institution :
Semicond. Equipment Oper., Eaton Corp., Austin, TX, USA
Abstract :
The ion implant dose requirements of a modern semiconductor manufacturing product flow span a range of approximately 1E11 cm-2 to 1E16 cm-2. High current implanters are typically operated in applications that require doses greater than 1E14 cm-2 . The low dose capability of a high current ion implanter is demonstrated for doses less than 5e12 cm-2 and beam currents less than 25 uA. The performance is studied using various metrology tools and verified using device data from a CMOS integrated circuit manufacturing process. Thermal wave and optical densitometry sensitivity and repeatability is determined over various time intervals. Adjusting threshold voltage with ion implantation is discussed
Keywords :
CMOS integrated circuits; integrated circuit measurement; integrated circuit technology; ion implantation; 25 muA; CMOS integrated circuit manufacturing; high current ion implanter; low dose performance; metrology; optical densitometry; thermal wave measurement; threshold voltage; CMOS integrated circuits; Implants; Ion implantation; Manufacturing processes; Metrology; Optical sensors; Particle beam optics; Production; Semiconductor device manufacture; Threshold voltage;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586407
