DocumentCode :
3483637
Title :
The use of a high current implanter for 5E10-E12 dose range implants
Author :
Clarke, N.L.H. ; Wauk, M.T. ; de Cock, G. ; Lee, R.M. ; Castle, M.D.S.
Author_Institution :
Implant Div., Appl. Mater., Horsham, UK
fYear :
1996
fDate :
16-21 Jun 1996
Firstpage :
494
Lastpage :
497
Abstract :
The Applied Materials P19500 xR implanter has been designed to cover the three main areas of implanter operation; low dose, high dose and high energies up to 750 keV, thereby reducing the number of implant tools required in a production environment. In this paper, low dose data from the extended dose range of the P19500 xR implanter is presented. Doses down to the 5E10 cm-2 level have been investigated using ThermawaveTM measurements and implant uniformity and repeatability better than 0.4% have been obtained. An effect due to the wafer surface condition prior to implant has been observed from the thermawave maps. Dose sensitivity data from this and other implants is also reported
Keywords :
ion implantation; photothermal effects; 750 keV; Applied Materials P19500xR; dose repeatability; dose sensitivity; high current implanter; thermawave mapping; wafer processing; Calibration; Costs; Foundries; Implants; Modems; Production; Road transportation; Semiconductor device modeling; Silicon; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
Type :
conf
DOI :
10.1109/IIT.1996.586408
Filename :
586408
Link To Document :
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