DocumentCode
3483721
Title
THz generation due to charge oscillations in quantum wells
Author
Chuang, S.L.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Abstract
Summary form only given. A few mechanisms have been identified for the terahertz generation from bulk and quantum-well semiconductors using an intense femtosecond optical pulse. These mechanisms include: carrier transport, bulk optical rectification, and field induced optical rectification effects. In this talk, the above mechanisms will be discussed with emphasis on the charge oscillations in quantum well structures
Keywords
microwave generation; THz generation; bulk optical rectification; carrier transport; charge oscillations; field induced optical rectification effects; intense femtosecond optical pulse; quantum well structures; quantum wells; quantum-well semiconductors; terahertz generation; Charge carrier processes; Current measurement; Electron optics; Excitons; Nonlinear optics; Optical pulse generation; Optical pulses; Optical superlattices; Quantum wells; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586414
Filename
586414
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