DocumentCode
3483754
Title
Ion implanter diagnostics using SurfaceSIMS
Author
Smith, Stephen P. ; Chia, Victor K.F. ; Yang, Ming Hong
Author_Institution
Charles Evans & Associates, Redwood City, CA, USA
fYear
1996
fDate
16-21 Jun 1996
Firstpage
512
Lastpage
515
Abstract
SIMS (secondary ion mass spectrometry) is recognized as an essential analytical tool for the diagnostic characterization of ion implanter design and operation. SurfaceSIMS (secondary ion mass spectrometry using oxygen flooding with low energy, high off-normal incident angle primary ions) provides the needed high sensitivity and uniform near-surface ion yields required for accurate and reproducible depth profiling of shallow ion implants and surface contaminants related to ion implantation
Keywords
ion implantation; secondary ion mass spectroscopy; SurfaceSIMS; depth profiling; ion implanter diagnostics; near-surface ion yield; oxygen flooding; secondary ion mass spectrometry; sensitivity; shallow ion implant; surface contaminant; Floods; Implants; Ion beams; Ion implantation; Mass spectroscopy; Pollution measurement; Rough surfaces; Silicon; Surface contamination; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586417
Filename
586417
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