• DocumentCode
    3483789
  • Title

    Optically generated THz beams from metal/GaAs interfaces

  • Author

    Ma, X.F. ; Jin, Y. ; Zhang, X.-C. ; Bliss, D. ; Larkin, J. ; Alexander, M.

  • Author_Institution
    Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    2
  • fYear
    1994
  • fDate
    31 Oct-3 Nov 1994
  • Firstpage
    184
  • Abstract
    Free space generation and propagation of electromagnetic pulses at THz frequencies is a fast growing sub-field in the photonics and optoelectronics community. Currently there are two general techniques utilizing ultrafast laser pulses to generate THz beams from semiconductors: photoconduction and optical rectification. The photoconductive method uses high-speed photoconductors as transient current sources for radiating antennas, whereas optical rectification uses electro-optic crystals as nonlinear media for difference-frequency-generation. In this paper we report on further studies of laser induced THz beams form metal/GaAs interfaces
  • Keywords
    metallic thin films; GaAs; THz frequencies; difference-frequency-generation; electromagnetic pulse propagation; free space generation; high-speed photoconductors; laser induced THz beams; metal/GaAs interfaces; nonlinear media; optical rectification; optically generated THz beams; photoconduction; photoconductive method; radiating antennas; semiconductors; transient current sources; ultrafast laser pulses; Electromagnetic transients; Gallium arsenide; High speed optical techniques; Laser beams; Lasers and electrooptics; Nonlinear optics; Optical beams; Optical pulse generation; Semiconductor lasers; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Conference_Location
    Boston, MA
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.586419
  • Filename
    586419