DocumentCode :
3483789
Title :
Optically generated THz beams from metal/GaAs interfaces
Author :
Ma, X.F. ; Jin, Y. ; Zhang, X.-C. ; Bliss, D. ; Larkin, J. ; Alexander, M.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
Volume :
2
fYear :
1994
fDate :
31 Oct-3 Nov 1994
Firstpage :
184
Abstract :
Free space generation and propagation of electromagnetic pulses at THz frequencies is a fast growing sub-field in the photonics and optoelectronics community. Currently there are two general techniques utilizing ultrafast laser pulses to generate THz beams from semiconductors: photoconduction and optical rectification. The photoconductive method uses high-speed photoconductors as transient current sources for radiating antennas, whereas optical rectification uses electro-optic crystals as nonlinear media for difference-frequency-generation. In this paper we report on further studies of laser induced THz beams form metal/GaAs interfaces
Keywords :
metallic thin films; GaAs; THz frequencies; difference-frequency-generation; electromagnetic pulse propagation; free space generation; high-speed photoconductors; laser induced THz beams; metal/GaAs interfaces; nonlinear media; optical rectification; optically generated THz beams; photoconduction; photoconductive method; radiating antennas; semiconductors; transient current sources; ultrafast laser pulses; Electromagnetic transients; Gallium arsenide; High speed optical techniques; Laser beams; Lasers and electrooptics; Nonlinear optics; Optical beams; Optical pulse generation; Semiconductor lasers; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
Type :
conf
DOI :
10.1109/LEOS.1994.586419
Filename :
586419
Link To Document :
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