Title :
Understanding implant damage by implant channeling profile measurements
Author :
Packan, P. ; Kenne, H. ; Thompson, S. ; Corcoran, S. ; Taylor, M.
Author_Institution :
Intel Corp., Hillsboro, OR, USA
Abstract :
This study qualitatively measures the damage created during ion implantation by monitoring the amount of channeling which occurs during a subsequent boron implant. The effects of implant dose, energy and beam current on damage generation are presented. In addition, the effects of implant species on damage creation is shown. These effects are qualitatively modeled using dechanneling calculations based on local damage densities. It is shown for the first time that IV recombination of the initial damage cascade generated by ion implantation occurs at temperatures as low as 400°C and for times as short as 5 sec
Keywords :
boron; channelling; elemental semiconductors; ion implantation; silicon; 400 C; Si:B; channeling profile measurement; damage cascade; dechanneling; impurity vacancy recombination; ion implantation; Boron; Crystallization; Implants; Ion implantation; Lattices; Monitoring; Nuclear power generation; Silicon; Tail; Temperature;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586436
