Title :
An accurate Monte Carlo binary collision model for BF2 implants into (100) single-crystal silicon
Author :
Yang, S.-H. ; Morris, S.J. ; Tian, S. ; Parab, K. ; Obradovic, B. ; Morris, M. ; Tasch, A.F. ; Snell, C.M.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
In this paper is reported a physically based Monte Carlo model and simulator for accurate simulation of BF2 ion implantation in (100) single-crystal silicon. An improved electronic stopping model and a cumulative damage generation model have been developed and implemented in the simulator. These new physically based models greatly improve the capability for predicting BF2 as-implanted profiles. The profile dependence on the implant tilt and rotation angles as well as on the implant dose and energy can be very well predicted over the energy range 15 keV-65 keV
Keywords :
Monte Carlo methods; boron compounds; elemental semiconductors; ion implantation; semiconductor process modelling; silicon; (100) single-crystal silicon; 15 to 65 keV; BF2 ion implantation; Monte Carlo simulation; Si:BF2; binary collision model; cumulative damage generation model; dopant profile; electronic stopping model; rotation angle; tilt angle; Atomic measurements; Boron; Implants; Ion implantation; Laboratories; Monte Carlo methods; Predictive models; Semiconductor device modeling; Semiconductor process modeling; Silicon;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586439
