DocumentCode
3484151
Title
Comparisons of UT-MARLOWE predictions of implant-induced damage with experimentally measured amorphous layer thicknesses
Author
Morris, M.F. ; Tian, S. ; Yang, S.-H. ; Morris, S.J. ; Obradovic, B. ; Tasch, A.F. ; Hummel, R.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
1996
fDate
16-21 Jun 1996
Firstpage
551
Lastpage
554
Abstract
Amorphous layer thicknesses have been obtained for As, BF2 and B ion implants using the following experimental techniques: RBS, differential reflectometry, SEM and XTEM. Good agreement is generally found between the amorphous layer thickness measurements. Amorphous layer thickness predictions are presented based on the current version (3.1) of UT-MARLOWE with the simplified physically based damage model. The predictions for the amorphous layer thicknesses are in good agreement with the experimental data for As and BF2, but are larger than the measured amorphous layer thicknesses for B implants. The difference in the predictive ability for As and BF2 relative to B is explained in terms of the distributions of damage produced during implantation. The measurement results, predictions, and the differences found are discussed in this paper
Keywords
Rutherford backscattering; amorphisation; elemental semiconductors; ion implantation; reflectometry; scanning electron microscopy; semiconductor process modelling; silicon; transmission electron microscopy; RBS; SEM; Si:As; Si:B; Si:BF2; UT-MARLOWE model; XTEM; amorphous layer thickness; differential reflectometry; ion implantation damage; Amorphous materials; Doping profiles; Implants; Impurities; Ion implantation; Materials science and technology; Microelectronics; Predictive models; Reflectometry; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586440
Filename
586440
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