• DocumentCode
    3484151
  • Title

    Comparisons of UT-MARLOWE predictions of implant-induced damage with experimentally measured amorphous layer thicknesses

  • Author

    Morris, M.F. ; Tian, S. ; Yang, S.-H. ; Morris, S.J. ; Obradovic, B. ; Tasch, A.F. ; Hummel, R.

  • Author_Institution
    Microelectron. Res. Center, Texas Univ., Austin, TX, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    551
  • Lastpage
    554
  • Abstract
    Amorphous layer thicknesses have been obtained for As, BF2 and B ion implants using the following experimental techniques: RBS, differential reflectometry, SEM and XTEM. Good agreement is generally found between the amorphous layer thickness measurements. Amorphous layer thickness predictions are presented based on the current version (3.1) of UT-MARLOWE with the simplified physically based damage model. The predictions for the amorphous layer thicknesses are in good agreement with the experimental data for As and BF2, but are larger than the measured amorphous layer thicknesses for B implants. The difference in the predictive ability for As and BF2 relative to B is explained in terms of the distributions of damage produced during implantation. The measurement results, predictions, and the differences found are discussed in this paper
  • Keywords
    Rutherford backscattering; amorphisation; elemental semiconductors; ion implantation; reflectometry; scanning electron microscopy; semiconductor process modelling; silicon; transmission electron microscopy; RBS; SEM; Si:As; Si:B; Si:BF2; UT-MARLOWE model; XTEM; amorphous layer thickness; differential reflectometry; ion implantation damage; Amorphous materials; Doping profiles; Implants; Impurities; Ion implantation; Materials science and technology; Microelectronics; Predictive models; Reflectometry; Thickness measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586440
  • Filename
    586440