DocumentCode
3484176
Title
A physical model for the role of dose and dose rate on amorphous depth generation
Author
Prussin, S. ; Zhang, Peng Fei
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear
1996
fDate
16-21 Jun 1996
Firstpage
555
Lastpage
558
Abstract
Evaluation of the increasing concentration of point defects during an implantation process is a necessary input for TCAD modeling of ultra-shallow junctions. This necessitates knowledge of the relaxation process, particularly of m, the fraction of point defects that survives in situ self-annihilation. Measurement of the α/C interface depths for a series of Si doses was applied to the determination of m for various dose rates
Keywords
amorphisation; elemental semiconductors; ion implantation; point defects; semiconductor process modelling; silicon; Si; TCAD; amorphous depth generation; amorphous/crystalline interface depth; dose; dose rate; ion implantation; physical model; point defect concentration; relaxation process; self-annihilation; silicon; ultra-shallow junction; Amorphous materials; Atomic measurements; Crystallization; Equations; Implants; Ion implantation; Laboratories; Lattices; Silicon; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location
Austin, TX
Print_ISBN
0-7803-3289-X
Type
conf
DOI
10.1109/IIT.1996.586441
Filename
586441
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