Title :
Coherent lifetime of electron hole pairs in InGaAsP measured by the Franz-Keldysh effect
Author :
Jaeger, A. ; Weiser, G.
Author_Institution :
Dept. of Phys. & Center of Mater. Sci., Marburg Univ., Germany
fDate :
31 Oct-3 Nov 1994
Abstract :
Electric field induced changes of the density of states are used to determine the coherent lifetime of excited states. Considerable variation with composition is observed in the quaternary material InGaAsP confirming similar observations of the excitonic linewidth
Keywords :
indium compounds; Franz-Keldysh effect; InGaAsP; coherent lifetime; composition; density of states; electric field induced changes; electroabsorption spectra; electron hole pairs; excited states; excitonic linewidth; quaternary material; Absorption; Capacitive sensors; Charge carrier processes; Composite materials; Excitons; Fluctuations; Gaussian processes; MOCVD; Time measurement;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586448
