Advanced Analysis and Modeling of MOSFET Characteristic Fluctuation Caused by Layout Variation

We report an advanced method of analyzing and modeling MOSFET characteristic fluctuations in CMOS circuits. We focused on gate space dependence, STI width dependence, and interaction between gate-STI distance and STI width in 65-nm node technology with a 40-nm-gate length. These dependences haven´t been treated by the conventional BSIM and other models. Gate space dependence is well modeled by treating mechanical stress and TED as separate causes of fluctuation. By bringing these dependences newly to the BSIM model in adequate form, advanced CMOS circuit performances must be estimated more accurately.