Title :
Growth and fabrication of LiNbO/sub 3/ thin film by LPE and QPM-SHG devices
Author :
Kawaguchi, T. ; Mizuuchi, K. ; Imaeda, M. ; Yamamoto, K. ; Fukuda, T.
Author_Institution :
NGK Insulators Ltd., Nagoya, Japan
fDate :
Aug. 30 1999-Sept. 3 1999
Abstract :
The authors describe the growth of LiNbO/sub 3/ thin films for optical applications. Liquid phase epitaxy (LPE) is a suitable technique because: a large number of dopants can be selected, it provides a thin film with high crystalline quality, and 3-inch size wafers with compositional and thickness uniformity can be achieved. Quasi-phase-matched (QPM) second-harmonic generation (SHG) devices are one of the most attractive applications of LiNbO/sub 3/ optical waveguides. Ferroelectric domain control and optical damage resistance are discussed and results from fabricated thin-film optical waveguides are presented.
Keywords :
electric domains; epitaxial layers; ferroelectric thin films; liquid phase epitaxial growth; lithium compounds; optical films; optical harmonic generation; optical phase matching; optical waveguides; refractive index; LPE; LiNbO/sub 3/; LiNbO/sub 3/ thin film fabrication; LiNbO/sub 3/ thin film growth; QPM-SHG devices; beneficial materials doping; crystalline properties control; crystallinity; ferroelectric domain control; optical damage resistance; optical waveguide devices; quasi-phase-matched second-harmonic generation; structural design; thin-film optical waveguides; Crystallization; Epitaxial growth; Ferroelectric materials; Optical control; Optical device fabrication; Optical devices; Optical films; Optical harmonic generation; Optical waveguides; Transistors;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on
Conference_Location :
Seoul, South Korea
Print_ISBN :
0-7803-5661-6
DOI :
10.1109/CLEOPR.1999.811618
