Title :
Scalable Cell Technology Utilizing Domain Wall Motion for High-speed MRAM
Author :
Numata, H. ; Suzuki, T. ; Ohshima, N. ; Fukami, S. ; Nagahara, K. ; Ishiwata, N. ; Kasai, N.
Author_Institution :
NEC Corp., Sagamihara
Abstract :
We propose a new MRAM cell that stores data in the form of the domain wall (DW) position. The DW is moved by the spin-polarized current that flows in the free layer. The cell was fabricated and the writing characteristics were investigated. A writing current of the cell was scalable, and the current density was reduced by using a new material. The cell is suitable for a high-speed MRAM that will compete with an eSRAM.
Keywords :
electric domain walls; random-access storage; spin polarised transport; domain wall motion; high-speed MRAM; scalable cell technology; spin-polarized current; Anisotropic magnetoresistance; Electrical resistance measurement; Electrons; Magnetic anisotropy; Magnetic separation; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy; Scalability; Writing;
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
DOI :
10.1109/VLSIT.2007.4339705
