Role of silicon surface in the removal of point defects in ultra-shallow junctions

Author

Sultan, A. ; Banerjee, S. ; List, S. ; Rodder, M.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

615

Lastpage

617

Abstract

The role of the Si surface in the annihilation of point defects has been studied for ultra-shallow p⁺/n junctions. The dopant and defect distributions for low energy implants lie within a few hundred Angstroms of the surface. The proximity of the Si surface has been shown to help in the efficient removal of point defects for the shallower junctions. A 5 keV, 1×10¹⁵ cm^-2 BF ₂ implant and a 30 keV, 3.3×10¹⁴ cm^-2 BF₂ implant were estimated to create comparable damage at different depths. After identical anneals, the higher energy implant sample showed end-of-range dislocation loops in cross-sectional transmission electron microscopy analysis, while the low energy sample, for which the point defect distribution was closer to the surface, was defect-free. This is attributed to the role of the Si surface as an efficient sink for the removal of point defects

Keywords

annealing; dislocation loops; elemental semiconductors; ion implantation; p-n junctions; point defects; silicon; transmission electron microscopy; 30 keV; 5 keV; Si:B; Si:BF₂; annealing; cross-sectional transmission electron microscopy; defect distribution; dislocation loop; dopant distribution; low energy ion implantation; point defect annihilation; silicon surface; ultra-shallow p⁺/n junction; CMOS technology; Implants; Instruments; Ion implantation; Microelectronics; Rapid thermal annealing; Silicon; Solids; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586475

Filename

586475