Improvement of high speed blocking voltage by means of metal field plate for GaAs Schottky power rectifiers

In GaAs power SBDs (Schottky barrier diodes) with a RESP (resistive Schottky barrier field plate) structure, a blocking voltage was observed when a reverse voltage was rapidly applied to GaAs SBDs. This voltage was termed high speed blocking voltage. Experiments indicated that the high speed blocking voltage was lower than the static blocking voltage. To improve the high speed blocking voltage without decreasing static voltage, the reverse characteristics of several structures of GaAs SBDs were investigated through experiments, and the high speed blocking voltage was successfully simulated using SPICE. The combination of a metal field plate structure and a RESP structure resulted in a high speed blocking voltage as high as the static blocking voltage for GaAs power SBDs