Transient enhanced diffusion and defect studies in B implanted Si

Author

Liu, J. ; Krishnamoorthy, V. ; Jones, K.S. ; Law, M.E. ; Shi, J. ; Bennett, J.

Author_Institution

Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

626

Lastpage

629

Abstract

Si wafers were implanted with 20 keV boron ions to a dose of 2×10¹⁴ cm^-2. Subsequent anneals were performed in a nitrogen ambient at 650°C to 800°C for various times. The microstructures of the samples were examined using transmission electron microscopy (TEM). {311} defects were the only type of defects observed in all the samples. Transient enhanced diffusion (TED) behavior of boron atoms was studied using secondary ion mass spectrometry (SIMS). The diffusivity enhancement was calculated using FLOOPS simulations. The activation energy for the TED saturation process was determined to be 1.6 eV. Contributions of boron interstitial clusters and {311} defects to TED will be discussed

Keywords

annealing; boron; diffusion; elemental semiconductors; interstitials; ion implantation; secondary ion mass spectra; silicon; transmission electron microscopy; 20 keV; 650 to 800 C; B ion implantation; FLOOPS simulation; Si wafer; Si:B; activation energy; annealing; interstitial cluster; microstructure; secondary ion mass spectrometry; transient enhanced diffusion; transmission electron microscopy; {311} defect; Annealing; Atomic measurements; Boron; Electrons; Materials science and technology; Microstructure; Nitrogen; Silicon; Temperature; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586480

Filename

586480