DocumentCode :
3484968
Title :
Design of a Low-Power Bandgap Current Reference
Author :
Ru Bei
Author_Institution :
Inst. of Comput. & Inf. Eng., Xinxiang Univ., Xinxiang, China
fYear :
2010
fDate :
7-9 Nov. 2010
Firstpage :
1
Lastpage :
3
Abstract :
A low-power complementary metal oxide semiconductor (CMOS) bandgap current reference is proposed under the 1.8V supply voltage. The temperature compensation current generator was used in order to obtain an accurate 5μA current with lower temperature coefficient. Sub-threshold technology and advanced startup circuit were adopted to decrease the circuit power consumption. The current reference has been simulated based on SMIC 0.18μm CMOS technology. The simulation results show that it has significantly low power and low sensitivity to the temperature. The power consumption is only 35.22μW. The temperature coefficient is 42.62ppm/°C under typical process with the temperature range from -40°C to 125°C.
Keywords :
CMOS integrated circuits; compensation; energy gap; low-power electronics; reference circuits; sensitivity analysis; SMIC CMOS technology; circuit power consumption; complementary metal oxide semiconductor; low-power CMOS bandgap current reference design; power 35.22 muW; size 0.18 mum; startup circuit; subthreshold technology; temperature -40 degC to 125 degC; temperature coefficient; temperature compensation current generator; voltage 1.8 V; CMOS integrated circuits; Equations; MOSFETs; Photonic band gap; Power demand; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
E-Product E-Service and E-Entertainment (ICEEE), 2010 International Conference on
Conference_Location :
Henan
Print_ISBN :
978-1-4244-7159-1
Type :
conf
DOI :
10.1109/ICEEE.2010.5661273
Filename :
5661273
Link To Document :
بازگشت