DocumentCode
348503
Title
Self aligned AlInAs native oxidized current aperture buried heterostructure InGaAsP/InP distributed feedback laser
Author
Zhi-Jie, Wang ; Soo-Jin, Chua ; Wei, Wang ; Fan, Zhou ; Jing-Yuan, Zhang ; Wang Xiao-jie
Author_Institution
Inst. of Mater. Res. & Eng., Nat. Univ. of Singapore, Singapore
Volume
2
fYear
1999
fDate
1999
Firstpage
527
Abstract
An InGaAsP/InP self-aligned native oxidized buried heterostructure distributed feedback laser has been successfully developed. It exhibited a low threshold of 5.0 mA with 36 dB SSMR at 1.56 μm. The laser´s high temperature performance is superior to the conventional BH laser with p-n reverse biased junction
Keywords
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium arsenide; indium compounds; oxidation; quantum well lasers; 1.56 mum; 5.0 mA; AlInAs; AlInAs native oxidized current aperture; InGaAsP-InP; InGaAsP/InP self-aligned native oxidized buried heterostructure distributed feedback laser; high temperature performance; low threshold; Apertures; Distributed feedback devices; Gas lasers; Indium phosphide; Laser feedback; Oxidation; Substrates; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-5634-9
Type
conf
DOI
10.1109/LEOS.1999.811831
Filename
811831
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