Title :
Reliability Perspective of High-k Gate Stack Assessed by Temperature Dependence of Dielectric Breakdown
Author :
Okada, Kenji ; Horikawa, Tsuyoshi ; Satake, Hideki ; Inumiya, Seiji ; Akasaka, Yasushi ; Ootsuka, Fumio ; Nara, Yasuo ; Ota, Hiroyuki ; Nabatame, Toshihide ; Toriumi, Akira
Abstract :
Apparent difference of the dielectric breakdown behavior between high-k stack and the conventional SiO2 is investigated by the temperature dependence of TDDB lifetime. It is clarified that the temperature dependence of TDDB lifetime in high-k stack can be described by two parameters, which is identical to the case of conventional SiO2.
Keywords :
electric breakdown; high-k dielectric thin films; semiconductor device reliability; silicon compounds; SiO2; dielectric breakdown; high k gate stack; reliability perspective; temperature dependence; Acceleration; Aluminum oxide; Dielectric breakdown; Electric breakdown; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Stress; Temperature dependence; Temperature distribution;
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
DOI :
10.1109/VLSIT.2007.4339716
