Physical Understanding of Strain Effects on Gate Oxide Reliability of MOSFETs

Author

Irisawa, T. ; Numata, T. ; Toyoda, E. ; Hirashita, N. ; Tezuka, T. ; Sugiyama, N. ; Takagi, S.

Author_Institution

MIRAI-ASET, Kawasaki

fYear

2007

fDate

12-14 June 2007

Firstpage

36

Lastpage

37

Abstract

The strain effects on TDDB and NBTI are systematically investigated using biaxially strained Si MOSFETs and their physical origins are examined. It is found that TDDB reliability of nMOS is significantly improved in strained-Si MOSFETs, while that of pMOS is slightly degraded. These dependences are well explained by the strain-induced modulation of gate current. It is also found that NBTI reliability is degraded by applying the biaxial tensile strain. This could be due to strain-induced enhancement of tunneling probability of holes into Si-H bonding states near the MOS interface.

Keywords

MOSFET; semiconductor device reliability; MOS interface; MOSFET; NBTI; TDDB; biaxial tensile strain; gate current; gate oxide reliability; nMOS; pMOS; strain effects; strain-induced modulation; tunneling probability; Bonding; Capacitive sensors; Degradation; MOS devices; MOSFETs; Niobium compounds; Oxidation; Tensile strain; Titanium compounds; Tunneling; Gate current; NBTI; Reliability; Strain; TDDB;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-03-1

Type

conf

DOI

10.1109/VLSIT.2007.4339717

Filename

4339717