Title :
Optically-controlled optical gate using a double diode structure
Author :
Yairi, Micah B. ; Demir, Hilmi V. ; Coldren, Chris W. ; Miller, David A B ; Harris, J.S.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
A new device concept enabling ultra-short optically controlled optical gating is demonstrated. Using a dual-diode GaAs multiple-quantum well (MQW) structure, low power surface-normal switching times of ~10 ps are achieved in this proof-of-principle device
Keywords :
high-speed optical techniques; optical logic; optical switches; quantum well lasers; 10 ps; 600 fJ; 9.3 ps; GaAs; double diode structure; dual-diode GaAs multiple-quantum well structure; low power surface-normal switching times; optically-controlled optical gate; proof-of-principle device; ultra-short optically controlled optical gating; Gallium arsenide; High speed optical techniques; Optical control; Optical devices; Optical sensors; P-i-n diodes; Quantum well devices; Semiconductor diodes; Telecommunication control; Voltage;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811961
