Title :
Suppression of lateral transient enhanced dopant diffusion by nitrogen implantation and its application to fully depleted MOSFETs/SIMOX
Author :
Nakashima, S. ; Takahashi, M. ; Nakayama, S. ; Ohno, T.
Author_Institution :
NTT Syst. Electron. Lab., Atsugi, Japan
Abstract :
This paper confirms that nitrogen ion implantation is effective in suppressing the lateral transient enhanced diffusion (TED) of implanted impurity dopants during annealing and that the suppressed TED for highly doped source and drain regions provides the MOSFET/SIMOX with a controlled effective channel length
Keywords :
MOSFET; SIMOX; annealing; diffusion barriers; elemental semiconductors; ion implantation; nitrogen; semiconductor doping; silicon; Si:N; annealing; controlled effective channel length; drain; fully depleted MOSFET/SIMOX; highly doped source; implanted impurity dopants; lateral transient enhanced dopant diffusion; nitrogen implantation; Boron; Impurities; Ion implantation; Laboratories; Leakage current; MOSFET circuits; Nitrogen; P-n junctions; Rapid thermal annealing; Threshold voltage;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812067
