DocumentCode
3485361
Title
Dedicated process architecture and the characteristics of 1.4 μm pixel CMOS image sensor with 8M density
Author
Chang-Rok Moon ; Jong-Cheol Shin ; Jinho Kim ; Yun Ki Lee ; Young-Joon Cho ; Yu-Yeon Yu ; Seong-Ho Hwang ; Byung Jun Park ; Hwang-Yoon Kim ; Seok-Ha Lee ; Jongwan Jung ; Seong-Ho Cho ; Kangbok Lee ; Kwangok Koh ; Duckhyung Lee ; Kinam Kim
Author_Institution
Samsung Electron. Co., Yongin
fYear
2007
fDate
12-14 June 2007
Firstpage
62
Lastpage
63
Abstract
A 1.4 μm-pitch pixel of CMOS image sensor, which is the smallest to date, has been successfully developed and integrated into 8M density for the first time. To overcome the crucial degradation of the saturation charge and sensitivity, a novel photodiode structure extended under transfer gate and an elaborate optical design including very thin tungsten pixel routing with 65 nm-grade design rules are introduced, which result in enhanced electrical and optical performance.
Keywords
CMOS image sensors; photodiodes; 8M density; CMOS image sensor; photodiode structure; saturation charge; transfer gate; tungsten pixel; CMOS image sensors; Paper technology; Pixel; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2007 IEEE Symposium on
Conference_Location
Kyoto
Print_ISBN
978-4-900784-03-1
Type
conf
DOI
10.1109/VLSIT.2007.4339728
Filename
4339728
Link To Document