Title :
Selective ion formation in a multi-cusp sputtering source
Author :
Ramos, Henry J. ; Kasuya, Toshiro ; Oomori, Hirotaka ; Wada, Motoi
Author_Institution :
Nat. Inst. of Phys., Univ of the Philippines, Quezon City, Philippines
Abstract :
Mass selected ion production by chemical sputtering processes opens possibilities to synthesize films. In this work results of attempts for creating ions of C2H2-, C 2-, C2H-, O-, O 2-, Ti2-, and TiO3-, by alternately using C and Ti as the targets in a multi-cusp sputtering ion source are reported. The efficiencies of production for carbon negative ions from the carbon target in H2/Ar and H2/CH4 discharges and titanium negative ions from the titanium target in O2/Ar and H2O/Ar discharges showed the dependence on the history of the ion source operation. The formations of TiO2- and TiO3- were found affected by the relative amount of O2 in the O2/Ar discharge
Keywords :
ion sources; sputter deposition; C2; C2-; C2H2-; C2H-; O; O2; O2-; O-; Ti2; Ti2-; TiO2; TiO2-; TiO3; TiO3-; chemical sputtering processes; films synthesis; mass selected ion production; multicusp sputtering source; selective ion formation; Ion beams; Ion sources; Plasma applications; Plasma immersion ion implantation; Plasma materials processing; Plasma sources; Plasma temperature; Production; Sputtering; Surface discharges;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812122