Title :
Silicon ion beam epitaxy
Author :
Rabalais, J.W. ; Bayati, Al ; Boyd, K.J. ; Marton, D. ; Kulik, J. ; Zhang, Z. ; Chu, W.K.
Author_Institution :
Dept. of Chem., Houston Univ., TX, USA
Abstract :
Direct ion beam deposition of 28Si+ ions for homoepitaxial film growth on Si{100} bas been. Studied over the ion energy range 8-80 eV in the low temperature range of 40-500°C. Deposition was performed by means of a mass-selected, UHV ion beam system with a well-defined energy for which the energy spread is ΔE=±3 eV. The films were analyzed in situ at growth intervals by RHEED and AES and ex situ by TEM, RBS, and SIMS. The growth mode, crystalline quality, and number of defects are found to be extremely sensitive to both substrate temperature and ion energy. An optimum ion energy window for achieving layer-by-layer growth and high crystalline quality films is observed. This behavior is discussed in terms of the changes in the phenomena which dominate the growth process as a function of ion energy and temperature
Keywords :
Auger effect; Rutherford backscattering; elemental semiconductors; ion beam applications; reflection high energy electron diffraction; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; silicon; transmission electron microscopy; vacuum deposition; vapour phase epitaxial growth; 40 to 500 C; 8 to 80 eV; 28Si+ ions; AES; RBS; RHEED; SIMS; Si; Si{100}; TEM; crystalline quality; defects; direct ion beam deposition; ex situ analysis; growth mode; homoepitaxial film growth; in situ analysis; ion beam epitaxy; ion energy range; layer-by-layer growth; low temperature range; mass-selected UHV ion beam system; optimum ion energy window; substrate temperature; Atomic layer deposition; Atomic measurements; Crystallization; Epitaxial growth; Identity-based encryption; Ion beams; Semiconductor films; Silicon; Substrates; Temperature sensors;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586505
