DocumentCode :
348541
Title :
Applied Materials xR80S, xRLEAP and xR120S 300 mm Ion Implant Systems
Author :
Edwards, Peter ; Banks, Peter ; Beeston, Brian ; Cooke, Richard ; David, Andrew ; Naylor-Smith, Richard ; Paffett, Geoffrey ; Boyd, Wendell ; Wagner, Dennis
Author_Institution :
Implant Div., Appl. Mater., Horsham, UK
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
362
Abstract :
This paper introduces the Applied Materials xR80S, xRLEAP and xR120S 300 mm Batch High Current Ion Implanter. This tool provides a low risk extension to 300 mm with maximum process transparency by sharing a common beamline family with the existing 200 mm products. The small footprint concept of the 200 mm systems has been retained. High productivity is achieved especially for shallow junction formation where the combined superiority of a batch system with the Applied Materials LEAP technology gives greatest advantage
Keywords :
ion implantation; semiconductor doping; 300 mm Batch High Current Ion Implanter; Applied Materials LEAP technology; Ion Implant Systems; beamline family; high productivity; maximum process transparency; shallow junction formation; small footprint concept; wafer manufacture; xR120S; xR80S; xRLEAP; Dosimetry; Hardware; Implants; Manufacturing automation; Plasma materials processing; Power generation economics; Production facilities; Productivity; Robots; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812128
Filename :
812128
Link To Document :
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