DocumentCode :
348543
Title :
Economic evaluation of the SDS(R) gas source for ion implantation
Author :
Kirk, Ralph ; McManus, Jim
Author_Institution :
Matheson Electron. Products Group, San Jose, CA, USA
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
385
Abstract :
Models have been developed which can be used to calculate the economic advantages of using SDS gas sources. The models use input data on the number of implanters in use, type of dopant sources, the number of species changes per day, the average amount of time required to service the implanter, and the value of each hour of ion implanter time. The models first use this data to determine how much additional production time would be available if SDS sources were used and then calculate the amount of money which would be saved per month. The models were based on cost of ownership concepts developed by SEMATECH and were refined using input from SDS source users around the world. Examples based on data from several individual fabs are presented which show uptime increases of more than 6% and several million dollars per year per fab site
Keywords :
integrated circuit economics; ion implantation; ion sources; semiconductor doping; SDS gas source; SEMATECH; cost of ownership concepts; dopant sources; economic evaluation; ion implantation; models; production time; species changes; uptime; Boron; Costs; Kirk field collapse effect; Production; Productivity; Safety; Semiconductor device modeling; Semiconductor process modeling; Silicon; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812134
Filename :
812134
Link To Document :
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