• DocumentCode
    3485438
  • Title

    VFB Roll-off in HfO2 Gate Stack after High Temperature Annealing Process - A Crucial Role of Out-diffused Oxygen from HfO2 to Si

  • Author

    Akiyama, K. ; Wang, W. ; Mizubayashi, W. ; Ikeda, M. ; Ota, H. ; Nabatame, T. ; Toriumi, A.

  • Author_Institution
    MIRAI-ASET, Tsukuba
  • fYear
    2007
  • fDate
    12-14 June 2007
  • Firstpage
    72
  • Lastpage
    73
  • Abstract
    We report for the first time that VFB roll-off behavior observed in thinner EOT region for metal/HfO2/SiO2 stacks is directly related to re-oxidation at the bottom SiO2/Si interface. Based on this understanding, we propose a possible solution for keeping high effective work-function (Phim,eff ) without VFB roll-off and demonstrate the obtained Phim,eff value of 4.9 eV mPt3Si/HfO2/SiO2 stack.
  • Keywords
    MOSFET; annealing; hafnium compounds; oxidation; silicon compounds; HfO2-SiO2; SiO2-Si; gate stack; high temperature annealing process; out-diffused oxygen; reoxidation; roll-off behavior; thinner EOT region; work-function; Annealing; Channel bank filters; Electrodes; Hafnium oxide; Hydrogen; Oxidation; Scalability; Silicon compounds; Temperature; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2007 IEEE Symposium on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-900784-03-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2007.4339732
  • Filename
    4339732
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3485438