Author :
Hirano, Yuuichi ; Tsujiuchi, Mikio ; Ishikawa, Kozo ; Shinohara, Hirofumi ; Terada, Takashi ; Maki, Yukio ; Iwamatsu, Toshiaki ; Eikyu, Katsumi ; Uchida, Tetsuya ; Obayashi, Shigeki ; Nii, Koji ; Tsukamoto, Yasumasa ; Yabuuchi, Makoto ; Ipposhi, Takashi ;
Abstract :
This paper presents that advanced actively body-bias controlled (Advanced ABC) technology contributes to enhancing operation margins of SRAMs. Significant enhancement of static noise margin (SNM) is successfully realized by using a body bias of load transistors while suppressing threshold-voltage variations for the first time. It is demonstrated that the write and read margins of 65nm-node SOI SRAMs are improved by the advanced ABC technology. Furthermore, it is found that the SNM is enhanced by 27% for 32nm and 49% for 22nm node. It is summarized that this technology is one of countermeasures for emerging generations.
Keywords :
SRAM chips; silicon-on-insulator; transistors; SOI; SRAM architecture; advanced actively body-bias controlled technology; load transistors; size 32 nm; static noise margin; threshold-voltage variation; Contact resistance; Driver circuits; Fluctuations; Isolation technology; MOSFETs; Performance analysis; Random access memory; Robustness; Threshold voltage; Transistors;
