Monitoring low dose implants with advanced ThermaWave and capacitance-voltage

Author

Curello, G. ; Gallacher, B. ; Carroll, D. ; Carsch, R. ; Graves, P. ; Chen, L. ; Kandler, E. ; Herlocher, R.H.Y.

Author_Institution

Siemens Microelectron., Newcastle-upon-Tyne, UK

Volume

1

fYear

1999

fDate

1999

Firstpage

546

Abstract

In this work a performance evaluation of some of the most recently improved instruments for low implant dose measurement based on Therma-Wave and Capacitance-Voltage techniques has been carried out. Dose sensitivity and repeatability has been investigated on a TW-TP420, TW-TP500, CV SSM5100, and a R&D Therma-Probe system. Results indicate that both types of tool have improved significantly in terms of repeatability due to the introduction of a solid state laser and of Hg probes in the TW and CV tool respectively. This in turn results in lower dose detectability required to tightly control threshold voltages in current DRAM technologies

Keywords

ion implantation; semiconductor device manufacture; semiconductor doping; DRAM technologies; Hg probes; advanced ThermaWave technique; capacitance-voltage measurements; dose sensitivity; monitoring low dose implants; repeatability; solid state laser; threshold voltages; Capacitance measurement; Capacitance-voltage characteristics; Implants; Instruments; Mercury (metals); Monitoring; Probes; Solid lasers; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812174

Filename

812174