• DocumentCode
    3485496
  • Title

    A scalable, statistical SPICE Gummel-Poon model for SiGe HBTs

  • Author

    Walter, K.M. ; Ebersman, B. ; Sunderland, D.A. ; Berg, G.D. ; Freeman, G.G. ; Groves, R.A. ; Jadus, D.K. ; Harame, D.L.

  • Author_Institution
    IBM Corp., Hopewell Junction, NY, USA
  • fYear
    1997
  • fDate
    28-30 Sep 1997
  • Firstpage
    32
  • Lastpage
    35
  • Abstract
    A scaleable, statistical model has been developed for SiGe HBTs. SPICE Gummel-Poon model parameters are scaled, and statistics added, using language features built into HSPICE. DC and AC fit is good over a wide range in emitter sizes. Features of IBM´s HBT technology which make scaling work are discussed
  • Keywords
    Ge-Si alloys; HSPICE; SiGe; SiGe HBT; scaling; statistical SPICE Gummel-Poon model; Bipolar transistors; Circuit simulation; Electronic mail; Equations; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; SPICE; Silicon germanium; Statistics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the
  • Conference_Location
    Minneapolis, MN
  • ISSN
    1088-9299
  • Print_ISBN
    0-7803-3916-9
  • Type

    conf

  • DOI
    10.1109/BIPOL.1997.647350
  • Filename
    647350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3485496