• DocumentCode
    3485500
  • Title

    Effects of ion beam mixing on the formation of SiGe nanocrystals by ion implantation

  • Author

    Zhu, Jane G. ; White, C.W. ; Budai, J.D. ; Withrow, S.P. ; Henderson, D.O.

  • Author_Institution
    Div. of Solid State, Oak Ridge Nat. Lab., TN, USA
  • fYear
    1996
  • fDate
    16-21 Jun 1996
  • Firstpage
    690
  • Lastpage
    693
  • Abstract
    Nanocrystals of SiGe alloy have been formed inside a SiO2 matrix by the ion implantation technique. It is demonstrated that the sequence of implantation of Si and Ge ions affects the nanocrystal formation significantly. This is explained by the ion-beam mixing effect during sequential implantation. The size distributions of the SiGe nanocrystals can also be controlled by annealing conditions
  • Keywords
    Ge-Si alloys; annealing; ion beam mixing; ion implantation; nanostructured materials; semiconductor materials; SiGe; SiGe nanocrystal; SiO2; SiO2 matrix; annealing; ion beam mixing; ion implantation; Annealing; Germanium silicon alloys; III-V semiconductor materials; Ion beams; Ion implantation; Laboratories; Nanocrystals; Silicon germanium; Size control; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology. Proceedings of the 11th International Conference on
  • Conference_Location
    Austin, TX
  • Print_ISBN
    0-7803-3289-X
  • Type

    conf

  • DOI
    10.1109/IIT.1996.586508
  • Filename
    586508
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3485500