Title :
Simulation of Statistical Variability in Nano MOSFETs
Author_Institution :
Univ. of Glasgow, Glasgow
Abstract :
Using 3D statistical numerical simulations we study and compare the impact of various sources of statistical variability in nano-CMOS transistors including random discrete dopants (RDD), line edge roughness (LER), polysilicon granularity (PSG) and interface roughness (IR). We show that the random dopant induced parameter fluctuations in conventional MOSFETs become a showstopper, impacting already adversely on their integration in SRAMs, and may force early transition to UTB SOI and double gate device architectures.
Keywords :
CMOS integrated circuits; MOSFET; statistical analysis; UTB SOI; double gate device architectures; interface roughness; line edge roughness; nanoCMOS transistors; nanoMOSFET; polysilicon granularity; random discrete dopants; statistical variability; CMOS technology; Circuit simulation; Electrons; Fluctuations; Grain boundaries; MOSFETs; Nanoscale devices; Numerical simulation; Threshold voltage; Transistors;
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
DOI :
10.1109/VLSIT.2007.4339737
