Characterization of a high current ultra low energy ion implanter

Author

Ranganathan, Rekha ; Krull, Wade ; Sundstrom, Hans ; Mack, Mike ; Sedgewick, Judy ; Eddy, Ron

Author_Institution

Eaton Corp., Beverly, MA, USA

Volume

1

fYear

1999

fDate

1999

Firstpage

618

Abstract

The process performance of a high current ultra low energy machine over a wide range of energies (200 eV to 30 keV) and high beam currents is characterized. Designed to meet the production needs of 0.18 μm ultra shallow junction implants, the ultra low energy (ULE2) high current low energy ion implanter delivers high currents and unmatched throughput. Critical process parameters such as uniformity, repeatability, particle performance and aluminum contamination are characterized. Data from characterization studies are presented and challenges unique to the ULE2 implanter are discussed

Keywords

ion implantation; ion sources; semiconductor junctions; surface contamination; 200 eV to 30 keV; aluminum contamination; beam current; high current ultra low energy ion implanter; process performance; repeatability; ultra shallow junction implants; uniformity; Aluminum; Annealing; Boron; Contamination; Electrical resistance measurement; Implants; Pollution measurement; Production; Radio frequency; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812192

Filename

812192