Title :
Comparison of implant charging results obtained with QUANTOX(R) and CHARM(R)-2
Author :
Daryanami, S. ; Shields, Jeff
Author_Institution :
Microchip Technol., Tempe, AZ, USA
Abstract :
A comparison of charging results obtained with Quantox(R) and CHARM(R)-2 is presented for the case of arsenic implants at 80 KeV and 20 KeV, performed at doses of 5e14/cm2 and 5e15/cm2 at beam currents of 9 mA and 18 mA. The surface potential maps obtained by the Quantox are compared to the potentials and currents measured on the CHARM sensors, with the plasma charge control system ON and OFF. The sensitivity of the Quantox surface potential technique is compared for changes in the oxide thickness, the dose, and the beam density
Keywords :
arsenic; elemental semiconductors; ion implantation; plasma materials processing; semiconductor doping; silicon; surface charging; surface potential; 18 mA; 20 keV; 80 keV; 9 mA; CHARM sensors; CHARM-2; QUANTOX; Si:As; arsenic implants; beam currents; beam density; doses; implant charging; oxide thickness; plasma charge control system; surface potential maps; Antenna measurements; Charge measurement; Current measurement; Implants; Integrated circuit measurements; Plasma density; Plasma measurements; Sensor phenomena and characterization; Surface charging; Voltage measurement;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812203
