Design of bipolar RF ring oscillators

Author

Finocchiaro, S. ; Palmisano, G. ; Salerno, R. ; Sclafani, C.

Author_Institution

Facolta di Ingegneria, Catania Univ., Italy

Volume

1

fYear

1999

fDate

1999

Firstpage

5

Abstract

This paper deals with RF ring oscillators in bipolar technology. Using a simplified approach based on a linear model, accurate design equations are provided for the main performance parameters such as the oscillation frequency, the oscillation amplitude, the quality factor, and the phase noise. Design considerations are also given which focus well tuning range and its relation with gain and oscillation amplitude, taking as a design example the most widely used gain stage. The proposed analysis is validated by the design of two and four-stage ring oscillators at 1.8 GHz using a high performance 18-GHz bipolar process. Simulations with the software CAD SpectreRF show an excellent agreement with the expected results

Keywords

Q-factor; UHF integrated circuits; UHF oscillators; bipolar analogue integrated circuits; integrated circuit design; integrated circuit noise; phase noise; radiofrequency oscillators; 1.8 GHz; 18 GHz; RFIC; SpectreRF; bipolar RF ring oscillators; design equations; four-stage ring oscillators; linear model; oscillation amplitude; oscillation frequency; phase noise; quality factor; tuning range; two-stage ring oscillators; Circuits; Equations; Inductors; Phase locked loops; Phase noise; Q factor; Radio frequency; Ring oscillators; Silicon; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Circuits and Systems, 1999. Proceedings of ICECS '99. The 6th IEEE International Conference on

Conference_Location

Pafos

Print_ISBN

0-7803-5682-9

Type

conf

DOI

10.1109/ICECS.1999.812210

Filename

812210