Title :
60 GHz high gain low noise amplifier using cascode noise reduction technique
Abstract :
This paper presents a high gain 60 GHz LNA (Low Noise Amplifier) using a 9 Metal Generic 90-nm TSMC CMOS technology for the 60 GHz mm-Wave (millimetre wave) WPAN. The noise reduction technique of CG (Common Gate) transistor of the cascode structure is proposed to improve noise performance. Due to the reduced noise feature of the CG transistor, cascode amplifier is adopted as a first stage amplifier which results in increased gain and stability. For the purpose of the wide dynamic range the circuit incorporates gain control mode which provides variable gain mode with improved input linearity. The designed LNA shows maximum 25.2 dB gain with the 3-dB frequency over 56 ~ 62 GHz. The gain control mode provides 14 dB of gain variation with the IP1dB (Input Referred Power 1dB Compression) -26 dBm at high gain and -11 dBm at low gain. The NF (Noise Figure) of the circuit is 5.2 dB under 19 mW power consumption.
Keywords :
CMOS analogue integrated circuits; circuit stability; gain control; integrated circuit design; integrated circuit noise; low noise amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; noise abatement; personal area networks; 9 metal generic TSMC CMOS technology; CG transistor; IP1dB; LNA; cascode amplifier; cascode noise reduction technique; common gate transistor; frequency 56 GHz to 62 GHz; gain 14 dB; gain 25.2 dB; gain 3 dB; high gain low noise amplifier; input referred power 1dB compression; millimetre wave WPAN; mmwave WPAN; noise figure 5.2 dB; power 19 mW; size 90 nm; stability; variable gain control mode; Gain; Gain control; Logic gates; Noise; Noise measurement; Noise reduction; Transistors; 60 GHz Low Noise Amplifier; Cascode Noise Reduction; Millimeter Wave amplifier; Variable Gain LNA;
Conference_Titel :
RF and Microwave Conference (RFM), 2013 IEEE International
Conference_Location :
Penang
Print_ISBN :
978-1-4799-2213-0
DOI :
10.1109/RFM.2013.6757210