Title :
Study on the magnetic properties of Au/Ge/Ni ohmic contacts to gaAs/AlGaAs hterostructures
Author :
Zhong, Y. ; Zhong, Q. ; He, Q. ; Lu, Y.F. ; Zhao, J.T. ; Li, Z.K. ; Zhang, Z.H. ; Chi, Z.T.
Author_Institution :
Nat. Inst. of Metrol., Beijing, China
Abstract :
Ohmic contacts to 2DEG are crucial in quantized Hall resistance device fabrication. Magnetic property of the commonly used Au/Ge/Ni recipe for ohmic contact to 2DEG in a GaAs/AlGaAs heterostructure is studied in this summary paper.
Keywords :
Hall effect devices; aluminium compounds; gallium compounds; high electron mobility transistors; ohmic contacts; two-dimensional electron gas; 2DEG; AlGaAs; heterostructures; ohmic contacts magnetic properties; quantized Hall resistance device fabrication; two dimensional electron gases; Alloying; Annealing; Contact resistance; Gallium arsenide; Gold; Magnetic field measurement; Magnetic hysteresis; Magnetic properties; Nickel; Ohmic contacts;
Conference_Titel :
Precision Electromagnetic Measurements (CPEM), 2010 Conference on
Conference_Location :
Daejeon
Print_ISBN :
978-1-4244-6795-2
DOI :
10.1109/CPEM.2010.5544750
